PART |
Description |
Maker |
MMZ25332B |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor, Inc
|
MMG3001NT112 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor, Inc
|
MMG3009NT108 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MMG3008NT1 |
Heterojunction Bipolar Transistor(InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
MMG3007NT1 |
Heterojunction Bipolar Transistor(InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
MMG3002NT1 MMG3002NT108 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MMG3012NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
MMG3002NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
MOTOROLA[Motorola, Inc]
|
BFP740F |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package
|
Infineon
|
BFP740 |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
IMZ2A |
COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS
|
Pan Jit International Inc.
|